A new paper by members of our team was recently published in Applied Surface Science journal, describing the effect of sputtering power and oxygen partial pressure on the structural and optoelectronic properties of transparent conductive Al-doped Zn oxides (AZO).
The thin films we analyzed were fabricated by reactive magnetron sputtering using a mosaic AZO target developed by our team members. The paper presents the results of electrical, optical and structural properties, along with studies of the surface morphology and cross sections of AZO thin films prepared using different sputtering power densities and different oxygen partial pressures in the working chamber. The best properties were found for the film prepared using the ratio of circulating to effective power equal to 0.5. For that thin film, the electron concentration of about 6∙10²⁰ cm⁻³ and band gap of 3.14 eV were determined.
The publication can be found here: https://doi.org/10.1016/j.apsusc.2024.160601